CHANZON
10pcs BD135 TO-126 NPN Power BJT Bipolar Junction Transistor
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Description
- Transistor Type: High-frequency Silicon Power Bipolar Junction Transistor.
- Transistor Polarity: NPN type for efficient power transfer and switching.
- Specification: Operates with a Collector Power Dissipation (PC) of 8W, a Collector Current (IC) of 1.5A, with Maximum Voltage Ratings (VCBO and VCEO) of 45V and Emitter-Base Voltage (VEBO) of 5V. It also sustains a Saturation Voltage (VCE(sat)) of 0.5V at IC=0.5 A.
- Performance: Features a frequency characteristic (fT) of 50MHz and a DC Current Gain (hFE) of 63-250, delivering excellent performance for high-frequency applications.
- Package: Packaged in a TO-126 form factor with 10 pieces per pack and enclosed in an anti-static bag offering electrostatic protection, ESD safety, and long shelf life.
Technical Specifications
Manufacturer
CHANZON
Color
Black
Size
TO-126
Height
1.3 cm
Length
18 cm
Width
15 cm
Shipping & Delivery
Your order is shipped from the USA and delivered to your door in South Africa in 10–20 working days. All items are fully tracked.
Returns & Exchanges
We offer a 30-day return window. If something isn't right, contact our support team and we'll make it right.
