CHANZON
10pcs BD911 TO-220C NPN Power BJT Bipolar Junction Transistor
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Description
- Transistor Type: High Power NPN Bipolar Junction Transistor, built with silicon material.
- Transistor Polarity: NPN-type Bipolar Joint Transistor, ideal for various electronic devices.
- Specification: Supports collector dissipation power (PC) up to 90W, collector current (IC) up to 15A, collector-base voltage (VCBO) up to 100V, collector-emitter voltage (VCEO) up to 100V, and emitter-base voltage (VEBO) up to 5V. The collector-emitter saturation voltage (VCE(sat)) at a collector current (Ic) of 10A is 3V. The transistor offers a characteristic frequency (fT) of 3 MHz and a DC gain (hFE) of 15-150.
- Application: Efficiently used for high power switching and amplification in various electronic circuits, including power supplies, motor control systems, lighting control, and more.
- Package: Packed in an Anti-Static bag for electrostatic protection, ensuring ESD safety and long shelf life.
Technical Specifications
Manufacturer
CHANZON
Size
TO-220
Height
1.3 cm
Length
18 cm
Width
15 cm
Shipping & Delivery
Your order is shipped from the USA and delivered to your door in South Africa in 10–20 working days. All items are fully tracked.
Returns & Exchanges
We offer a 30-day return window. If something isn't right, contact our support team and we'll make it right.
