CHANZON
2pcs MJ802 to-3 NPN Power BJT Bipolar Junction Transistor
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R 767
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Description
- Transistor Type: High Power Bipolar Junction Transistor made with Silicon Material.
- Transistor Polarity: NPN Bipolar Junction Transistor provides efficient power conversion.
- Specification: Features a power dissipation (PC) of 200W, collector current (IC) of 30A, maximum collector-base voltage (VCBO) of 100V, maximum collector-emitter voltage (VCEO) of 90V, and maximum emitter-base voltage (VEBO) of 4V.
- Application: Ideal for high-power electronic circuits including power supply regulation, motor control, and power amplification applications.
- Package: Pack of 2pcs TO-3 encased transistors, provided in Anti-Static bag to ensure electrostatic protection, ESD safety, and prolonged shelf life.
Technical Specifications
Manufacturer
CHANZON
Size
TO-3
Height
2.5 cm
Length
22 cm
Width
16 cm
Shipping & Delivery
Your order is shipped from the USA and delivered to your door in South Africa in 10–20 working days. All items are fully tracked.
Returns & Exchanges
We offer a 30-day return window. If something isn't right, contact our support team and we'll make it right.
