CHANZON
5pcs 2SC4140 TO-3P NPN Power BJT Bipolar Junction Transistor
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R 767
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Description
- Transistor Type: High Power NPN Bipolar Junction Transistor designed for superior amplification.
- Transistor Polarity: High output NPN transistor offers excellent switching and amplification properties.
- Specification: Power Dissipation (PC): 130W, Collector Current (IC): 10A, Voltage - Collector Emitter Breakdown (Max) VCEO: 400V, Voltage - Collector Base Breakdown (Max) VCBO: 500V, Voltage - Emitter Base Breakdown (Max) VEBO: 10V, Collector-Emitter Saturation Voltage VCE(sat): 0.5V, Frequency - Transition fT: 10 MHz, DC Current Gain hFE: 10.
- Application: Ideal for a wide range of applications including power supplies, motor controls, and general purpose amplification circuits.
- Package: Supplied in a pack of 5, these transistors are sealed in an Anti-Static bag to offer electrostatic protection, ensuring ESD safety and long shelf life.
Technical Specifications
Manufacturer
CHANZON
Color
Black
Size
TO-3P
Height
1.5 cm
Length
18 cm
Width
15 cm
Shipping & Delivery
Your order is shipped from the USA and delivered to your door in South Africa in 10–20 working days. All items are fully tracked.
Returns & Exchanges
We offer a 30-day return window. If something isn't right, contact our support team and we'll make it right.
