CHANZON
IRFP250 TO-247 NMOS MOS N-Channel Power MOSFET Transistor, High Power Dissipation (Pack of 5pcs)
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R 684
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Description
- Transistor Type: High Power NMOS N-Channel Power MOSFET Transistor.
- Transistor Polarity: NMOS N-Channel, enhances the efficiency of current flow.
- Specification: Features high dissipation power (PD) of 190W and drain current (ID) of 30A. Withstand drain-source voltage (VDSS) of 200V and drain-source resistance (RDS(on)) of 0.085 Ω.
- Application: Ideal for high-power switching and amplification needs in various circuits, especially suitable for power supplies and motor controls.
- Package: Provided in TO-247 packaging, with each set containing 5 pieces. Each pack comes in an anti-static bag for electrostatic protection, ensuring ESD safety and prolonged shelf life.
Technical Specifications
Manufacturer
CHANZON
Size
TO-247
Height
1.5 cm
Length
18 cm
Width
15 cm
Shipping & Delivery
Your order is shipped from the USA and delivered to your door in South Africa in 10–20 working days. All items are fully tracked.
Returns & Exchanges
We offer a 30-day return window. If something isn't right, contact our support team and we'll make it right.